1 h igh diode semiconductor sot- 23 limiting values (absolute maximum rating) applications device descripsion ? marking features z shunt regulator z high-current shunt regulator z precision current limiter sot -23 encapsulate adjust able reference source tl431 1 2 3 1. refe rence 2. cathode 3. anod e the tl431 is a three-terminal ad justable shunt regulator offering excellent temperature stability . this device has a typical dynamic output impedance of 0.2 ? . the device can be used as a replacement for zener diodes in many applications. z the output voltage c an be adjusted to 36v z low dynamic output impedance, its typical value is 0.2 ? z trapping current capability is 1 to 100ma z low output noise voltage z fast on -state response z the effective temperature compensation in the working range of z the typical value of the equivalent temperature full temperature factor in the whole temperature scope is 50 ppm/ pa ramete r symbol value unit catho de v o lt a ge v ka 37 v catho de c u rrent ran ge (c o ntinuous) i ka -100~ + 1 5 0 ma refere nce lnput cur r ent range iref 0.05~+10 ma po wer dissi pation p d 3 00 mw s torage temperature ra nge tstg -65~+150 operatin g junction t emperature t j 150 operating ambient t emperature range t opr -25 ~ + 85 t hermal resistance from junction to ambient r ja 417 /w 431 z
2 h igh diode semiconductor parameter symbol t e st condition s min typ max unit reference i np u t v oltage (fig.1) v ref v ka =v ref , i ka =10ma 2.4 75 2.5 2.5 25 v deviation of reference inp u t v oltage o ver temperature (note) (fig.1) v ref /t v ka =v ref , i ka =10ma 4.5 17 mv v ka =10v~v ref -1.0 -2.7 mv/v ratio o f c hange in r eference i nput v oltage to the change in c athode v oltage (fig.2) v ref /v ka i ka =10ma v ka =36v~ 10v -0.5 -2.0 mv/v reference i nput c urrent (f ig.2 ) l ref i ka = 10ma,r 1 =10 k ? r 2 = 1.5 4 a deviation of r eference i n put c urrent o ver f ull t emperature r ange (fig.2) l ref /t l ka =10ma, r 1 =10 k ? r 2 = 0.4 1.2 a minimum cathode current for r egu lati on (fig.1) i ka(min) v ka =v ref 0.45 1.0 ma off-state cathode current (fig .3) i ka(off) v ka =36v,v ref =0 0.05 1.0 a dynamic i m pe dance z ka v ka =v ref, l ka =1 to 100ma f 1.0 k hz 0.15 0.5 ? n ote: t min = -25 ,t max =+ 85 classification r i v ref rank 0 .5% 1% range 2.487-2.51 3 2.475-2. 525 i k v ref v ka input figure 1. test circuit for v ka = v ref input i k r2 i ref v ref v ka r1 figure 2. test circuit for v ka > v ref v ka v ref 1 r1 r2 i ref r1 i of f input v ka figure 3. test circuit for i off t min t a t max t a =-25 to 85 electrical ch aracteristics (t a =25 unless otherwise noted)
3 h igh diode semiconductor typical characteristics -2 -1 0 1 2 3 -100 -5 0 0 50 100 150 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -200 -100 0 100 200 300 400 500 600 700 800 v ka =v ref t a =25 cat hode voltage v ka , cat hode voltage (v) i k , cathode current (ma) v ka =v ref t a =25 ca t hode current versus ca thode voltage i k , cathode current (ua) v ka , cat hode voltage (v) i ka( min) ka ka ref t e st circuit for v ka =v ref
4 h igh diode semiconductor typical characteristics - 40 -20 0 20406080100 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 -20 -16 -12 -8 -4 0 - 40 -20 0 20406080100 0 100 200 300 400 500 600 700 v ka =36v v re f =0v o ff-sta te cathode current versus ambient temperature t a , am bient t emperature ( ) i off , off-state cathode current (na) i k =10ma t a =25 cha nge i n reference input voltage versus cathode voltage v re f , ref erence input voltage (mv) v ka , cat ho de voltage (v) i k =10m a r 1 =10k ? re fe rence input current versus ambient temperature t a , am bient t emperature ( ) i re f , reference input current (na) t est circuit for i ref t est circuit for i off t est circuit for v ka =v ref ( 1+r1/r2 ) +r1*i ref
5 jshd jshd h igh diode semiconductor package outline dimensions sot-23 suggested pad layout sot-23
reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30 6
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